PRODUCTS & MATERIALS
6H-SiC Wafers & Substrates
6H-SiC Wafers & Substrates: 6H-SiC has a different crystal stacking sequence from 4H-SiC and should not be silently substituted. Confirm polytype, face orientation and intended device process. For procurement, describe Diameter, thickness and tolerance, 4H/6H polytype, Si-face/C-face, off-axis angle, doping, grade, polish, defect limits. We discuss product options and inspection requirements case by case, rather than publishing unsupported stock or tolerance guarantees.
6H-SiC Wafers & Substrates: 6H-SiC has a different crystal stacking sequence from 4H-SiC and should not be silently substituted. Confirm polytype, face orientation and intended device process. For procurement, describe Diameter, thickness and tolerance, 4H/6H polytype, Si-face/C-face, off-axis angle, doping, grade, polish, defect limits. We discuss product options and inspection requirements case by case, rather than publishing unsupported stock or tolerance guarantees.
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