PRODUCTS & MATERIALS
SiC Epitaxial Wafers
SiC Epitaxial Wafers: An epitaxial SiC wafer consists of a substrate with an epitaxially grown SiC layer for device-layer engineering. Substrate grade, epi thickness, doping, uniformity and defect screening should be specified separately. For procurement, describe Diameter, thickness and tolerance, 4H/6H polytype, Si-face/C-face, off-axis angle, doping, grade, polish, defect limits. We discuss product options and inspection requirements case by case, rather than publishing unsupported stock or tolerance guarantees.
SiC Epitaxial Wafers: An epitaxial SiC wafer consists of a substrate with an epitaxially grown SiC layer for device-layer engineering. Substrate grade, epi thickness, doping, uniformity and defect screening should be specified separately. For procurement, describe Diameter, thickness and tolerance, 4H/6H polytype, Si-face/C-face, off-axis angle, doping, grade, polish, defect limits. We discuss product options and inspection requirements case by case, rather than publishing unsupported stock or tolerance guarantees.
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