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Materials for semiconductor, optics & research

6H-SiC Substrate

The 6H stacking sequence and orientation must be explicitly stated, particularly when experiments were developed for 4H-SiC. Contact WEGITEK with your required specifications, quantity and drawings for a technical quotation.

SKU: WGT-0005 Category:

6H-SiC Substrate: Material Overview

6H-SiC Substrate is considered for power electronics, RF and device research, epitaxy development and semiconductor equipment process qualification. Silicon carbide is a wide-bandgap semiconductor valued for its combination of high breakdown field, thermal conductivity and operation in demanding device environments. 6H-SiC has a different crystal stacking sequence from 4H-SiC and should not be silently substituted.

The 6H stacking sequence and orientation must be explicitly stated, particularly when experiments were developed for 4H-SiC.

Engineering and Specification Considerations

Confirm polytype, face orientation and intended device process.

  • Diameter
  • thickness and tolerance
  • 4H/6H polytype
  • Si-face/C-face
  • off-axis angle
  • doping
  • grade
  • polish
  • defect limits

Quality and Inspection Priorities

Engineering acceptance should be defined before order confirmation. Depending on grade and use, the inspection review may include:

  • Polytype verification
  • crystal orientation
  • conductivity type
  • resistivity
  • micropipe / dislocation metrics
  • TTV
  • bow
  • warp
  • edge condition and surface defects

Where possible, request the inspection method, measurement location and batch documentation alongside the numeric limit.

Applications and Selection Guidance

Potential application fields include power electronics, RF and device research, epitaxy development and semiconductor equipment process qualification. The final selection depends on thermal, electrical, optical and mechanical operating conditions. Share the process step and acceptance criteria to help the supplier evaluate feasibility.

Frequently Asked Question

What distinguishes a device-grade SiC wafer from a dummy or test-grade wafer?

The relevant acceptance criteria can include crystallographic quality, defect density, resistivity, surface preparation and the inspection method. A grade label alone is not a substitute for a signed specification.

What should be included in a request for quotation?

Send the part name or drawing, material grade, diameter/size, thickness, orientation, surface finish, quantity and required tests. If you have a target delivery date or acceptance specification, include it at the outset.

Specification status: Product descriptions are reference information, not a published stock or performance guarantee. Final specifications, manufacturing options, price and delivery require written confirmation.

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